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| NSR10F40QNXT5G Datasheet, PDF (2/6 Pages) ON Semiconductor – Schottky Diode Optimized | |||
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NSR10F40QNXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
JunctionâtoâAmbient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
228
PD
548
Thermal Resistance
JunctionâtoâAmbient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
85
1.47
Storage Temperature Range
Tstg
â40 to +125
Junction Temperature
TJ
+150
1. Mounted onto a 4 in square FRâ4 board 50 mm sq. 1 oz. Cu 0.06â thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FRâ4 board 1 in sq. 1 oz. Cu 0.06â thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
W
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
(VR = 10 V)
(VR = 40 V)
IR
mA
10
100
Forward Voltage
(IF = 0.5 A)
(IF = 1.0 A)
VF
V
0.42
0.49
Reverse Recovery (Special)
TRR
ns
Switch from Forward Current to Reverse Voltage
Time taken from 1 ns Transition Time to Fully Stabilized
(IF = 750 mA to VR = 36 V, 25°C)
(IF = 750 mA to VR = 36 V, 85°C)
28.7
27.4
http://onsemi.com
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