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NSR10F40NXT5G_14 Datasheet, PDF (2/3 Pages) ON Semiconductor – Schottky Barrier Diode | |||
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NSR10F40NXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
JunctionâtoâAmbient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
228
PD
548
Thermal Resistance
JunctionâtoâAmbient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
85
1.47
Storage Temperature Range
Tstg
â40 to +125
Junction Operating Temperature Range
TJ
â40 to +150
1. Mounted onto a 4 in square FRâ4 board 50 mm sq. 1 oz. Cu 0.06â thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FRâ4 board 1 in sq. 1 oz. Cu 0.06â thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
W
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
(VR = 10 V)
(VR = 40 V)
IR
mA
10
100
Forward Voltage
(IF = 0.5 A)
(IF = 1.0 A)
VF
V
0.42
0.49
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1
TJ = 125°C
TJ = 150°C
0.1
0.01
0.001
0.0
75°C 25°C â25°C
0.1
0.2
0.3
0.4
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
100000
10000
1000
100
10
1
0.1
0.01
0.001
0.5
0
150°C
125°C
75°C
25°C
â25°C
5 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (V)
Figure 2. Typical Reverse Current
200
180
160
140
120
100
80
60
40
20
0
0
TA = 25°C
5 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Capacitance
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