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NSR1030MW2T1G Datasheet, PDF (2/3 Pages) ON Semiconductor – Schottky Barrier Diodes
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NSR1030MW2T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Total Capacitance (VR = 5.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 10 V)
Forward Voltage (IF = 1 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 100 mAdc)
Forward Voltage (IF = 500 mAdc)
Forward Voltage (IF = 1000 mAdc)
CT
−
IR
−
VF
−
VF
−
VF
−
VF
−
VF
−
Typ
Max
Unit
−
25
pF
−
30
mAdc
−
0.250
Vdc
−
0.310
Vdc
−
0.395
Vdc
−
0.495
Vdc
−
0.595
Vdc
1
100000
0.1
125°C
10000
1000
0.01
0.001
0.0
85°C 25°C
−45°C
−55°C
0.1
0.2
0.3
0.4
0.5
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
100
10
1
0.6
0
150°C
125°C
85°C
25°C
5
10
15
20
25
30
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
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