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NSR1020MW2T1G Datasheet, PDF (2/3 Pages) ON Semiconductor – Schottky Barrier Diodes
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NSR1020MW2T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Total Capacitance (VR = 5.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 15 V)
Forward Voltage (IF = 1 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 100 mAdc)
Forward Voltage (IF = 500 mAdc)
Forward Voltage (IF = 1000 mAdc)
CT
−
25
29
pF
IR
−
−
40
mAdc
VF
−
−
0.20
Vdc
VF
−
−
0.26
Vdc
VF
−
−
0.33
Vdc
VF
−
−
0.44
Vdc
VF
−
−
0.54
Vdc
1000
100
150°C
10000
1000
100
150°C
125°C
85°C
10
85°C
10
−55°C
1
25°C −45°C
1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
25°C
5
10
15
20
25
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
140
120
100
80
60
40
20
0
0
5
10
15
20
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
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