NSR1020MW2 Datasheet, PDF (2/3 Pages) ON Semiconductor – Schottky Barrier Diodes

NSR1020MW2
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Total Capacitance (V_R = 5.0 V, f = 1.0 MHz)
C_T
−
25
29
pF
Reverse Leakage (V_R = 15 V)
I_R
−
−
40
mAdc
Forward Voltage (I_F = 1 mAdc)
V_F
−
−
0.20
Vdc
Forward Voltage (I_F = 10 mAdc)
V_F
−
−
0.26
Vdc
Forward Voltage (I_F = 100 mAdc)
V_F
−
−
0.33
Vdc
Forward Voltage (I_F = 500 mAdc)
V_F
−
−
0.44
Vdc
Forward Voltage (I_F = 1000 mAdc)
V_F
−
−
0.54
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1000
100
150°C
10000
1000
100
150°C
125°C
85°C
10
85°C
10
−55°C
1
25°C _{−45°C}
1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
25°C
5
10
15
20
25
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
140
120
100
80
60
40
20
0
0
5
10
15
20
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
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