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| NSR0620P2T5G Datasheet, PDF (2/4 Pages) ON Semiconductor – Schottky Barrier Diode | |||
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NSR0620P2T5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance
JunctionâtoâAmbient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
520
PD
190
Thermal Resistance
JunctionâtoâAmbient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
175
PD
570
Junction and Storage Temperature Range
TJ, Tstg
â55 to +125
1. Mounted onto a 4 in square FRâ4 board 10 mm sq. 1 oz. Cu 0.06â thick singleâsided. Operating to steady state.
2. Mounted onto a 4 in square FRâ4 board 1 in sq. 1 oz. Cu 0.06â thick singleâsided. Operating to steady state.
Unit
°C/W
mW
°C/W
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
(VR = 10 V)
(VR = 20 V)
IR
mA
2.0
10
9.0
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
(IF = 500 mA)
VF
mV
270
310
350
390
480
520
Total Capacitance
(VR = 1.0 V, f = 1 MHz)
CT
12
pF
Reverse Recovery Time
(IF = IR = 10 mA, IR = 1.0 mA)
trr
4.0
ns
DC Current
Source
+
â
0.1 mF
tr
tp
0V
10%
750 mH
IF
50 W Output
Pulse
Generator
0.1 mF
Adjust for IRM
DUT
90%
VR
Pulse Generator
Output
IF
trr
RL = 50 W
50 W Input
Oscilloscope
Current
Transformer
iR(REC) = 1 mA
IRM
Output Pulse
(IF = IRM = 10 mA; measured
at iR(REC) = 1 mA)
1. DC Current Source is adjusted for a Forward Current (IF) of 10 mA.
2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA.
3. Pulse Generator transition time << trr.
4. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM.
5. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
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