NSR05F40NXT5G_14 Datasheet, PDF (2/4 Pages) ON Semiconductor – Schottky Barrier Diode

NSR05F40NXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T_A = 25°C
R_qJA
240
P_D
521
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T_A = 25°C
R_qJA
94
P_D
1.3
Storage Temperature Range
T_stg
−40 to +125
Junction Operating Temperature Range
T_J
−40 to +150
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
W
°C
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
(V_R = 10 V)
(V_R = 40 V)
I_R
mA
15
75
Forward Voltage
(I_F = 100 mA)
(I_F = 500 mA)
V_F
V
0.340
0.360
0.420
0.460
Total Capacitance
(V_R = 1 V, f = 1 MHz)
(V_R = 10 V, f = 1 MHz)
C_T
pF
70
80
27
35
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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