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NSR0320XV6T1 Datasheet, PDF (2/4 Pages) ON Semiconductor – Schottky Barrier Diode
NSR0320XV6T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Total Capacitance (VR = 5.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 15 V)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 100 mAdc)
Forward Voltage (IF = 900 mAdc)
CT
−
30
35
pF
IR
−
10
50
mAdc
VF
−
0.24
0.27
Vdc
VF
−
0.30
0.35
Vdc
VF
−
0.45
0.50
Vdc
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