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NSR0240P2T5G_15 Datasheet, PDF (2/3 Pages) ON Semiconductor – Schottky Barrier Diode | |||
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NSR0240P2T5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
JunctionâtoâAmbient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
520
PD
240
Thermal Resistance
JunctionâtoâAmbient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
175
PD
710
Junction and Storage Temperature Range
TJ, Tstg
â55 to +150
1. Mounted onto a 4 in square FRâ4 board 10 mm sq. 1 oz. Cu 0.06â thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FRâ4 board 1 in sq. 1 oz. Cu 0.06â thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Leakage
IR
(VR = 25 V)
(VR = 40 V)
Forward Voltage (IF = 10 mA)
VF
(IF = 100 mA)
(IF = 200 mA)
Total Capacitance
CT
(VR = 1.0 V, f = 1 MHz)
Typ
Max
Unit
mA
0.2
0.55
0.8
5.0
0.34
0.365
V
0.46
0.50
0.54
0.60
7.0
pF
1000
100
125°C
10
1 150°C
0.1
0.01
0.001 85°C 25°C
â40°C
0
0.1
0.2
0.3
0.4
0.5
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
1.0Eâ02
1.0Eâ03
150°C
1.0Eâ04
1.0Eâ05
1.0Eâ06
1.0Eâ07
125°C
85°C
75°C
25°C
1.0Eâ08
â40°C
1.0Eâ09
1.0Eâ10
0.6
0 5 10 15 20 25 30 35 40 45
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
14
12
TA = 25°C
10
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
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