NSR01L30MX Datasheet, PDF (2/4 Pages) ON Semiconductor – Schottky Barrier Diode

NSR01L30MX
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T_A = 25°C
R_qJA
695
P_D
180
Storage Temperature Range
T_stg
−55 to +150
Junction Temperature
T_J
+150
1. Mounted onto a 4 in square FR−4 board 100 mm sq. 2 oz. Cu 0.06” thick single−sided. Operating to steady state.
Unit
°C/W
mW
°C
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
(V_R = 10 V)
(V_R = 30 V)
I_R
mA
0.2
0.5
Forward Voltage
(I_F = 1 mA)
(I_F = 10 mA)
V_F
V
0.35
0.46
Total Capacitance
(V_R = 5.0 V, f = 1 MHz)
CT
0.8
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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