NSR0170HT1G Datasheet, PDF (2/3 Pages) ON Semiconductor – Schottky Barrier Diode

NSR0170HT1G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T_A = 25°C
R_qJA
680
P_D
180
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T_A = 25°C
R_qJA
440
P_D
280
Junction and Storage Temperature Range
T_J, T_stg
−55 to +150
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Reverse Leakage
(V_R = 50 V)
(V_R = 70 V)
I_R
25
90
−
3.0
Forward Voltage
(I_F = 1.0 mA)
(I_F = 10 mA)
(I_F = 15 mA)
V_F
340
390
560
640
650
730
Total Capacitance
(V_R = 0 V, f = 1 MHz)
CT
2.0
Unit
°C/W
mW
°C/W
mW
°C
Unit
nA
mA
mV
pF
1000
100
10
1
0.1
0.01
0.001
0
150°C
125°C
85°C
25°C
−40°C
0.2 0.4 0.6 0.8 1.0 1.2
V_F, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
100
10
1
0.1
0.01
0.001
0.0001
0.00001
1.4 1.6
0
150°C
125°C
85°C
25°C
−40°C
10
20
30
40
50
60 70
V_R, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
2.5
T_A = 25°C
2.0
1.5
1.0
0.5
0
0 10 20 30 40 50 60 70 80
V_R, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
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