NSR0140P2T5G_09 Datasheet, PDF (2/3 Pages) ON Semiconductor – Schottky Barrier Diode

NSR0140P2T5G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I_R = 10 mA)
Total Capacitance
(V_R = 1.0 V, f = 1.0 MHz)
V_(BR)R
30
−
−
V
C_T
−
2.0
2.5
pF
Reverse Leakage
(V_R = 30 V)
I_R
−
300
500
nA
Forward Voltage
(I_F = 1.0 mA)
V_F
−
0.28
0.35
V
10
1.0
1 50°C
1 25°C
85°C
25°C - 40°C - 55°C
0.1
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
V_F, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1000
100
T_A = 150°C
125°C
10
85°C
1.0
0.1
25°C
0.01
0.001
0
5
10
15
20
25
30 35
V_R, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current versus Reverse
Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0
0 2.0 4.0 6.0 8.0 10 12 14 16 18
V_R, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
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