NSQA6V8AQ5T2 Datasheet, PDF (2/6 Pages) ON Semiconductor – Transient Voltage Suppressor

NSQA6V8AW5T2 Series
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted)
Symbol
Parameter
I_PP
Maximum Reverse Peak Pulse Current
V_C
Clamping Voltage @ I_PP
V_RWM Working Peak Reverse Voltage
I_R
Maximum Reverse Leakage Current @ V_RWM
V_BR
Breakdown Voltage @ I_T
I_T
Test Current
I_F
Forward Current
V_F
Forward Voltage @ I_F
P_pk
Peak Power Dissipation
C
Capacitance @ V_R = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
I_F
V_C V_BR V_RWM
II_RT V_F
V
I_PP
Uni−Directional
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
NSQA6V8AW5T2
Breakdown Voltage (I_T = 1 mA) (Note 3)
Leakage Current (V_RWM = 5.0 V)
Clamping Voltage 1 (I_PP = 1.6 A) (Note 4)
Maximum Peak Pulse Current (Note 4)
Junction Capacitance − (V_R = 0 V, f = 1 MHz)
− (V_R = 3.0 V, f = 1 MHz)
V_BR
6.4
6.8
7.1
V
I_R
−
−
1.0
mA
V_C
−
−
13
V
I_PP
−
−
1.6
A
C_J
−
12
15
pF
−
6.7
9.5
Clamping Voltage − Per IEC61000−4−2
NSQA12VAW5T2
V_C
Figures 1 and 2
V
Breakdown Voltage (I_T = 5 mA) (Note 3)
V_BR
Leakage Current (V_RWM = 9.0 V)
I_R
Zener Impedence (I_T = 5 mA)
Z_Z
Clamping Voltage 1 (I_PP = 0.9 A) (Note 4)
V_C
Maximum Peak Pulse Current (Note 4)
I_PP
Junction Capacitance − (V_R = 0 V, f = 1 MHz)
C_J
Clamping Voltage − Per IEC61000−4−2 (Note 5)
V_C
3. V_BR is measured at pulse test current I_T.
4. Surge current waveform per Figure 5.
5. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
11.4
12.0
12.7
V
−
−
0.05
mA
−
−
30
W
−
−
23
V
−
−
0.9
A
−
−
15
pF
Figures 1 and 2
V
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