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| NSPM0061 Datasheet, PDF (2/6 Pages) ON Semiconductor – Transient Voltage Suppressors | |||
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NSPM0061
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
IF
VC VBR VRWM
IIRT VF
V
IPP
UniâDirectional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Reverse Working Voltage
VRWM
6.3
V
Breakdown Voltage (Note 1)
VBR
IT = 1 mA
6.5
7.3
9.0
V
Reverse Leakage Current
IR
VRWM = 6.3 V
1
mA
Clamping Voltage (Note 2)
VC
IPP = 1 A, tp = 8 x 20 ms
7.5
V
Clamping Voltage (Note 2)
VC
IPP = 35 A, tp = 8 x 20 ms
9.5
V
Clamping Voltage (Note 2)
VC
IPP = 70 A, tp = 8 x 20 ms
11.5
V
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz
12
pF
Dynamic Resistance
RDYN TLP Pulse
0.04
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
2. Nonârepetitive current pulse at TA = 25°C, per IEC61000â4â5 waveform.
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