NSM80100MT1G Datasheet, PDF (2/6 Pages) ON Semiconductor – PNP Transistor with Dual Series Switching Diode

NSM80100MT1G
Q1: PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(I_C = −1.0 mA, I_B = 0)
Emitter −Base Breakdown Voltage
(I_E = −100 mA, I_C = 0)
Collector Cutoff Current
(V_CE = −60 V, I_B = 0)
Collector Cutoff Current
(V_CB = −80 V, I_E = 0)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I_C = −10 mA, V_CE = −1.0 V)
Collector −Emitter Saturation Voltage
(I_C = −100 mA, I_B = −10 mA)
Base −Emitter Saturation Voltage
(I_C = −100 mA, V_CE = −1.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 4)
(I_C = −100 mA, V_CE = −2.0 V, f = 100 MHz)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
4. fT is defined as the frequency at which |h_fe| extrapolates to unity.
Symbol
V_(BR)CEO
V_(BR)EBO
I_CES
I_CBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
Min
Max
−80
−
−4.0
−
−
−0.1
−
−0.1
120
−
−
−0.25
−
−1.2
150
−
Unit
V
V
mA
mA
−
V
V
MHz
D1, D2: SWITCHING DIODE (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
V_(BR)
V
75
−
Reverse Voltage Leakage Current
I_R
(V_R = 75 V)
(V_R = 20 V, T_J = 150°C)
(V_R = 75 V, T_J = 150°C)
mA
−
1.0
−
30
−
100
Diode Capacitance
C_D
(V_R = 0 V, f = 1.0 MHz)
pF
−
1.5
Forward Voltage
V_F
(I_F = 1.0 mA)
(I_F = 10 mA)
(I_F = 50 mA)
(I_F = 150 mA)
mV
−
715
−
855
−
1000
−
1250
Reverse Recovery Time
t_rr
(I_F = I_R = 10 mA, i_R(REC) = 1.0 mA, R_L = 100 W)
ns
−
4.0
Forward Recovery Voltage
V_FR
(I_F = 10 mA, t_r = 20 ns)
V
−
1.75
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
http://onsemi.com
2