NSI50350ADT4G Datasheet, PDF (2/7 Pages) ON Semiconductor – Constant Current Regulator & LED Driver

NSI50350ADT4G
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Anode−Cathode Voltage
Vak Max
50
V
Reverse Voltage
Operating and Storage Junction Temperature Range
ESD Rating: Human Body Model
Machine Model
V_R
T_J, T_stg
ESD
500
mV
−55 to +175
°C
Class 3B (8000 V)
Class C (400 V)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Steady State Current @ Vak = 7.5 V (Note 1)
I_reg(SS)
315
350
385
mA
Voltage Overhead (Note 2)
V_overhead
1.8
V
Pulse Current @ Vak = 7.5 V (Note 3)
I_reg(P)
376.5
424
474.5
mA
1. I_reg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 300 sec, using 900 mm² DENKA K1, 1.5 mm Al, 2kV Thermally
conductive dielectric, 2 oz. Cu (or equivalent), in still air.
2. V_overhead = V_in − V_LEDs. V_overhead is typical value for 70% I_reg(SS).
3. I_reg(P) non−repetitive pulse test. Pulse width t ≤ 360 msec.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 4) T_A = 25°C
Derate above 25°C
P_D
4144
mW
27.62
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 4)
Thermal Reference, Junction−to−Tab (Note 4)
Total Device Dissipation (Note 5) T_A = 25°C
Derate above 25°C
R_θJA
R_ψJL
P_D
36.2
1.16
6383
42.6
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Reference, Junction−to−Tab (Note 5)
Total Device Dissipation (Note 6) T_A = 25°C
Derate above 25°C
R_θJA
R_ψJL
P_D
23.5
1.07
8671
57.8
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Reference, Junction−to−Tab (Note 6)
Total Device Dissipation (Note 7) T_A = 25°C
Derate above 25°C
R_θJA
R_ψJL
P_D
17.3
0.76
11029
73.5
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Reference, Junction−to−Tab (Note 7)
Total Device Dissipation (Note 8) T_A = 25°C
Derate above 25°C
R_θJA
R_ψJL
P_D
13.6
0.72
4202
28.01
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 8)
R_θJA
35.7
°C/W
Thermal Reference, Junction−to−Tab (Note 8)
R_ψJL
5.4
°C/W
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
4. 400 mm², see below PCB description, still air.
5. 900 mm², see below PCB description, still air.
6. 1600 mm², see below PCB description, still air.
7. 2500 mm², see below PCB description, still air.
(For NOTES 4−7: PCB is DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent).
8. 1000 mm², FR4, 3 oz Cu, still air.
http://onsemi.com
2