NSI45090JD Datasheet, PDF (2/8 Pages) ON Semiconductor – Adjustable Constant Current Regulator & LED Driver

NSI45090JD, NSV45090JD
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Anode−Cathode Voltage
Vak Max
45
V
Reverse Voltage
Operating and Storage Junction Temperature Range
ESD Rating:
Human Body Model
Machine Model
V_R
T_J, T_stg
ESD
500
mV
−55 to +150
°C
Class 3A (4000 V)
Class B (200 V)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
Pulse Current @ Vak = 7.5 V (Note 3)
Capacitance @ Vak = 7.5 V (Note 4)
I_reg(SS)
V_overhead
I_reg(P)
C
76.5
86.2
90
103.5 mA
1.8
V
103
119.6 mA
17
pF
Capacitance @ Vak = 0 V (Note 4)
C
70
pF
1. I_reg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 80 sec, using FR−4 @ 300 mm² 2 oz. Copper traces, in still air.
2. V_overhead = V_in − V_LEDs. V_overhead is typical value for 65% I_reg(SS).
3. I_reg(P) non−repetitive pulse test. Pulse width t ≤ 1 msec.
4. f = 1 MHz, 0.02 V RMS.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 5) T_A = 25°C
Derate above 25°C
Symbol
P_D
Max
1771
14.16
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Reference, Junction−to−Lead 4 (Note 5)
Total Device Dissipation (Note 6) T_A = 25°C
Derate above 25°C
R_θJA
R_ψJL4
P_D
70.6
6.8
2083
16.67
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Reference, Junction−to−Lead 4 (Note 6)
Total Device Dissipation (Note 7) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Reference, Junction−to−Lead 4 (Note 7)
Total Device Dissipation (Note 8) T_A = 25°C
Derate above 25°C
R_θJA
R_ψJL4
P_D
R_θJA
R_ψJL4
P_D
60
6.3
2080
16.64
60.1
6.5
2441
19.53
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 8)
Thermal Reference, Junction−to−Lead 4 (Note 8)
Total Device Dissipation (Note 9) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 9)
Thermal Reference, Junction−to−Lead 4 (Note 9)
Total Device Dissipation (Note 10) T_A = 25°C
Derate above 25°C
R_θJA
R_ψJL4
P_D
R_θJA
R_ψJL4
P_D
51.2
5.9
2309
18.47
54.1
6.2
2713
21.71
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 10)
R_θJA
46.1
°C/W
Thermal Reference, Junction−to−Lead 4 (Note 10)
R_ψJL4
5.7
°C/W
Junction and Storage Temperature Range
T_J, T_stg
−55 to +150
°C
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
5. FR−4 @ 300 mm², 1 oz. copper traces, still air.
6. FR−4 @ 300 mm², 2 oz. copper traces, still air.
7. FR−4 @ 500 mm², 1 oz. copper traces, still air.
8. FR−4 @ 500 mm², 2 oz. copper traces, still air.
9. FR−4 @ 700 mm², 1 oz. copper traces, still air.
10. FR−4 @ 700 mm², 2 oz. copper traces, still air.
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