NSI45030T1G_15 Datasheet, PDF (2/7 Pages) ON Semiconductor – Constant Current Regulator & LED Driver

NSI45030T1G, NSV45030T1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
Pulse Current @ Vak = 7.5 V (Note 3)
Capacitance @ Vak = 7.5 V (Note 4)
I_reg(SS)
V_overhead
I_reg(P)
C
25.5
30.3
30
1.8
36.4
2.5
34.5
mA
V
42.5
mA
pF
Capacitance @ Vak = 0 V (Note 4)
C
5.7
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. I_reg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 10 sec, using FR−4 @ 300 mm² 1 oz. Copper traces, in still air.
2. V_overhead = V_in − V_LEDs. V_overhead is typical value for 75% I_reg(SS).
3. I_reg(P) non−repetitive pulse test. Pulse width t ≤ 300 msec.
4. f = 1 MHz, 0.02 V RMS.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 5) T_A = 25°C
Derate above 25°C
P_D
208
mW
1.66
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Reference, Lead−to−Ambient (Note 5)
Thermal Reference, Junction−to−Cathode Lead (Note 5)
Total Device Dissipation (Note 6) T_A = 25°C
Derate above 25°C
R_θJA
R_ψLA
R_ψJL
P_D
600
°C/W
404
°C/W
196
°C/W
227
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Reference, Lead−to−Ambient (Note 6)
Thermal Reference, Junction−to−Cathode Lead (Note 6)
Total Device Dissipation (Note 7) T_A = 25°C
Derate above 25°C
R_θJA
R_ψLA
R_ψJL
P_D
550
°C/W
390
°C/W
160
°C/W
347
mW
2.8
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Reference, Lead−to−Ambient (Note 7)
Thermal Reference, Junction−to−Cathode Lead (Note 7)
Total Device Dissipation (Note 8) T_A = 25°C
Derate above 25°C
R_θJA
R_ψLA
R_ψJL
P_D
360
°C/W
200
°C/W
160
°C/W
368
mW
2.9
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 8)
Thermal Reference, Lead−to−Ambient (Note 8)
Thermal Reference, Junction−to−Cathode Lead (Note 8)
Total Device Dissipation (Note 9) T_A = 25°C
Derate above 25°C
R_θJA
R_ψLA
R_ψJL
P_D
340
°C/W
208
°C/W
132
°C/W
436
mW
3.5
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 9)
Thermal Reference, Lead−to−Ambient (Note 9)
Thermal Reference, Junction−to−Cathode Lead (Note 9)
Total Device Dissipation (Note 10) T_A = 25°C
Derate above 25°C
R_θJA
R_ψLA
R_ψJL
P_D
287
°C/W
139
°C/W
148
°C/W
463
mW
3.7
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 10)
R_θJA
270
°C/W
Thermal Reference, Lead−to−Ambient (Note 10)
R_ψLA
150
°C/W
Thermal Reference, Junction−to−Cathode Lead (Note 10)
R_ψJL
120
°C/W
Junction and Storage Temperature Range
5. FR−4 @ 100 mm², 1 oz. copper traces, still air.
6. FR−4 @ 100 mm², 2 oz. copper traces, still air.
7. FR−4 @ 300 mm², 1 oz. copper traces, still air.
8. FR−4 @ 300 mm², 2 oz. copper traces, still air.
9. FR−4 @ 500 mm², 1 oz. copper traces, still air.
10. FR−4 @ 500 mm², 2 oz. copper traces, still air.
T_J, T_stg
−55 to +150
°C
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
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