NSI45020AT1G Datasheet, PDF (2/6 Pages) ON Semiconductor – Constant Current Regulator & LED Driver 45 V, 20 mA  10%, 460 mW Package

NSI45020AT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
Pulse Current @ Vak = 7.5 V (Note 3)
Capacitance @ Vak = 7.5 V (Note 4)
I_reg(SS)
V_overhead
I_reg(P)
C
18
19.85
20
1.8
22.5
2.5
22
mA
V
25.15 mA
pF
Capacitance @ Vak = 0 V (Note 4)
C
5.7
pF
1. I_reg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 10 sec, using FR−4 @ 300 mm² 1 oz. Copper traces, in still air.
2. V_overhead = V_in − V_LEDs. V_overhead is typical value for 85% I_reg(SS).
3. I_reg(P) non−repetitive pulse test. Pulse width t ≤ 300 msec.
4. f = 1 MHz, 0.02 V RMS.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 5) T_A = 25°C
Derate above 25°C
P_D
208
mW
1.66
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Reference, Lead−to−Ambient (Note 5)
Thermal Reference, Junction−to−Cathode Lead (Note 5)
Total Device Dissipation (Note 6) T_A = 25°C
Derate above 25°C
R_θJA
R_ψLA
R_ψJL
P_D
600
°C/W
404
°C/W
196
°C/W
227
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Reference, Lead−to−Ambient (Note 6)
Thermal Reference, Junction−to−Cathode Lead (Note 6)
Total Device Dissipation (Note 7) T_A = 25°C
Derate above 25°C
R_θJA
R_ψLA
R_ψJL
P_D
550
°C/W
390
°C/W
160
°C/W
347
mW
2.8
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Reference, Lead−to−Ambient (Note 7)
Thermal Reference, Junction−to−Cathode Lead (Note 7)
Total Device Dissipation (Note 8) T_A = 25°C
Derate above 25°C
R_θJA
R_ψLA
R_ψJL
P_D
360
°C/W
200
°C/W
160
°C/W
368
mW
2.9
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 8)
Thermal Reference, Lead−to−Ambient (Note 8)
Thermal Reference, Junction−to−Cathode Lead (Note 8)
Total Device Dissipation (Note 9) T_A = 25°C
Derate above 25°C
R_θJA
R_ψLA
R_ψJL
P_D
340
°C/W
208
°C/W
132
°C/W
436
mW
3.5
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 9)
Thermal Reference, Lead−to−Ambient (Note 9)
Thermal Reference, Junction−to−Cathode Lead (Note 9)
Total Device Dissipation (Note 10) T_A = 25°C
Derate above 25°C
R_θJA
R_ψLA
R_ψJL
P_D
287
°C/W
139
°C/W
148
°C/W
463
mW
3.7
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 10)
R_θJA
270
°C/W
Thermal Reference, Lead−to−Ambient (Note 10)
R_ψLA
150
°C/W
Thermal Reference, Junction−to−Cathode Lead (Note 10)
R_ψJL
120
°C/W
Junction and Storage Temperature Range
T_J, T_stg
−55 to +150
°C
5. FR−4 @ 100 mm², 1 oz. copper traces, still air.
6. FR−4 @ 100 mm², 2 oz. copper traces, still air.
7. FR−4 @ 300 mm², 1 oz. copper traces, still air.
8. FR−4 @ 300 mm², 2 oz. copper traces, still air.
9. FR−4 @ 500 mm², 1 oz. copper traces, still air.
10. FR−4 @ 500 mm², 2 oz. copper traces, still air.
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
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