NSF2250WT1_06 Datasheet, PDF (2/10 Pages) ON Semiconductor – NPN Silicon Oscillator and Mixer Transistor

NSF2250WT1
ELECTRICAL CHARACTERISTICS (T_A = 25°C)
Characteristic
Collector Cutoff Current
V_CB = 12 V, I_E = 0
DC Current Gain
V_CE = 10 V, I_C = 5.0 mA
Collector Saturation Voltage
I_C = 10 mA, I_B = 1.0 mA
Gain Bandwidth Product
V_CE = 3 V, I_E = −5.0 mA
Output Capacitance
V_CB = 3 V, I_E = 0 mA, f = 1.0 MHz
Collector to Base Time Constant
V_CE = 3 V, I_E = −5.0 mA, f = 31.9 MHz
Feedback Capacitance
V_CB = 10 V, I_E = 0 mA, f = 1.0 MHz
Symbol
I_CBO
h_FE
V_CE(sat)
f_T
C_OB
C_CSr_b’b
C_RE
Min
Typ
Max Unit
mA
−
−
0.1
−
120
−
250
V
−
−
0.5
2.0
2.3
GHz
−
pF
−
0.7
1.2
ps
−
3.5
8.0
pF
−
0.45
−
350
300
250
200
150
100
50
R_qJA = 403°C/W
0
− 50
0
50
100
150
T_A, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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