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NSDEMP11XV6T1_06 Datasheet, PDF (2/3 Pages) ON Semiconductor – Common Anode Quad Array Switching Diode
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NSDEMP11XV6T1, NSDEMP11XV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Reverse Voltage Leakage Current
IR
Forward Voltage
VF
Reverse Breakdown Voltage
VR
Diode Capacitance
CD
Reverse Recovery Time
trr (Note 3)
3. trr Test Circuit for NSDEMP11XV6T1 in Figure 4.
Condition
VR = 70 V
IF = 100 mA
IR = 100 mA
VR = 6.0 V, f = 1.0 MHz
IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR
TYPICAL ELECTRICAL CHARACTERISTICS
Min Max Unit
−
0.1 mAdc
−
1.2 Vdc
0
−
Vdc
−
3.5
pF
−
4.0
ns
100
10
TA = 85°C
1.0
10
TA = −40°C
0.1
1.0
TA = 25°C
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
0.001
1.2
0
TA = 25°C
10
20
30
40
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current
1.75
1.5
1.25
1.0
0.75
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
tr
tp
trr
IF
t
t
RL
A
RECOVERY TIME EQUIVALENT TEST CIRCUIT
10%
90%
VR
tp = 2 ms
tr = 0.35 ns
INPUT PULSE
Irr = 0.1 IR
IF = 5.0 mA
VR = 6 V
RL = 100 W
OUTPUT PULSE
Figure 4. Reverse Recovery Time Test Circuit for the NSDEMP11XV6T1
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