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| NSDEMN11XV6T1 Datasheet, PDF (2/6 Pages) ON Semiconductor – Common Cathode Quad Array Switching Diode | |||
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NSDEMN11XV6T1, NSDEMN11XV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
Reverse Voltage Leakage Current
IR
VR = 70 V
â
Forward Voltage
VF
IF = 100 mA
â
Reverse Breakdown Voltage
VR
IR = 100 mA
80
Diode Capacitance
CD
VR = 6.0 V, f = 1.0 MHz
â
Reverse Recovery Time
trr (Note 2) IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR
â
3. trr Test Circuit on following page.
Max
Unit
0.1
mAdc
1.2
Vdc
â
Vdc
3.5
pF
4.0
ns
http://onsemi.com
2
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