English
Language : 

NSDEMN11DXV6T1 Datasheet, PDF (2/4 Pages) ON Semiconductor – Common Cathode Quad Array Switching Diode
◁
NSDEMN11XV6T1, NSDEMN11XV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
IR
VR = 70 V
−
0.1
mAdc
VF
IF = 100 mA
−
1.2
Vdc
VR
IR = 100 mA
80
−
Vdc
CD
VR = 6.0 V, f = 1.0 MHz
−
3.5
pF
trr
IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR
−
4.0
ns
(Note 3)
3. trr Test Circuit on following page.
TYPICAL ELECTRICAL CHARACTERISTICS
100
10
TA = 85°C
1.0
10
TA = −40°C
0.1
1.0
TA = 25°C
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
0.001
1.2
0
TA = 25°C
10
20
30
40
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current
1.0
0.9
0.8
0.7
0.6
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
http://onsemi.com
2
 ▷