NSD070AL Datasheet, PDF(2/4 Page) ON Semiconductor

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NSD070AL Datasheet, PDF (2/4 Pages) ON Semiconductor – Switching Diode

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NSD070AL

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance

JunctionâtoâAmbient (Note 1)

Total Device Dissipation @ TA = 25Â°C

Junction and Storage Temperature Range

1. FRâ 4 = 1.0 0.75 0.062 in.

ELECTRICAL CHARACTERISTICS (TA = 25Â°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(VR = 70 Vdc)

Reverse Voltage Leakage Current

(VR = 70 Vdc)

(VR = 70 Vdc, TJ = 150Â°C)

Diode Capacitance

(VR = 0 V, f = 1.0 MHz)

Forward Voltage

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 50 mA)

(IF = 150 mA)

Reverse Recovery Time

(IF = IR = 10 mA) (Figure 1)

Symbol Min

RqJA

TJ, Tstg

Symbol Min

V(BR)

trr

Typ

Max

Unit

556

Â°C/W

225

â65 to +150 Â°C

Typ

Max

Unit

5.0

1.0

2.0

900

1000

1100

1250

3.0

820 W

+10 V

2.0 k

100 mH IF

0.1 mF

DUT

50 W OUTPUT

PULSE

GENERATOR

0.1 mF

10%

50 W INPUT

SAMPLING

OSCILLOSCOPE

90%

INPUT SIGNAL

trr

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp Â» trr

Figure 1. Recovery Time Equivalent Test Circuit

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