NSBC115TPDP6 Datasheet, PDF (2/6 Pages) ON Semiconductor – Complementary Bias Resistor Transistors

NSBC115TPDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
NSBC115TPDP6 (SOT−963) One Junction Heated
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R_qJA
NSBC115TPDP6 (SOT−963) Both Junction Heated (Note 3)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R_qJA
Junction and Storage Temperature Range
1. FR−4 @ 100 mm², 1 oz. copper traces, still air.
2. FR−4 @ 500 mm², 1 oz. copper traces, still air.
3. Both junction heated values assume total power is sum of two equally powered channels.
T_J, T_stg
Max
Unit
231
mW
269
1.9
mW/°C
2.2
540
°C/W
464
339
408
2.7
3.3
369
306
−55 to +150
mW
mW/°C
°C/W
°C
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