NSBA114EF3T5G Datasheet, PDF (2/6 Pages) ON Semiconductor – Digital Transistors (BRT)

NSBA114EF3T5G Series
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T_A = 25°C (Note 1)
Derate above 25°C
Thermal Resistance (Note 1)
Junction-to-Ambient
Total Device Dissipation
T_A = 25°C (Note 2)
Derate above 25°C
Thermal Resistance (Note 2) Junction-to-Ambient
Thermal Resistance (Note 1) Junction-to-Lead 3
Junction and Storage Temperature
1. FR−4 @ 100 mm², 1 oz. copper traces, still air.
2. FR−4 @ 500 mm², 1 oz. copper traces, still air.
Symbol
P_D
R_qJA
P_D
R_qJA
R_qJL
T_J, T_stg
Max
254
2.0
493
297
2.4
421
193
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C/W
°C
ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES
Device
Marking*
R1 (k)
R2 (k)
Package
Shipping^†
NSBA114EF3T5G
F (0°)
10
10
NSBA124EF3T5G
Y (0°)
22
22
NSBA144EF3T5G
E (0°)
47
47
NSBA114YF3T5TG
K (0°)
10
47
NSBA123TF3T5G
NSBA143EF3T5G
NSBA143ZF3T5G
F (90°)
A (90°)
E (90°)
2.2
∞
4.7
4.7
SOT−1123
(Pb−Free)
4.7
47
8000 / Tape & Reel
NSBA123JF3T5G
J (90°)
2.2
47
NSBA144WF3T5G
D (90°)
47
22
NSBA114TF3T5G
L (90°)
10
∞
NSBA115TF3T5G
Q (90°)
100
∞
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
*(XX°) = Degree rotation in the clockwise direction.
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