NSBA114EDP6T5G Datasheet, PDF (2/6 Pages) ON Semiconductor – Dual Digital Transistors (BRT)

NSBA114EDP6T5G Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
SINGLE HEATED
Total Device Dissipation
P_D
T_A = 25°C (Note 1)
Derate above 25°C
Thermal Resistance (Note 1)
Junction-to-Ambient
R_qJA
Total Device Dissipation
P_D
T_A = 25°C (Note 2)
Derate above 25°C
Thermal Resistance (Note 2) Junction-to-Ambient
DUAL HEATED (Note 3)
R_qJA
Total Device Dissipation
P_D
T_A = 25°C (Note 1)
Derate above 25°C
Thermal Resistance (Note 1)
Junction-to-Ambient
R_qJA
Total Device Dissipation
P_D
T_A = 25°C (Note 2)
Derate above 25°C
Thermal Resistance (Note 2) Junction-to-Ambient
R_qJA
Junction and Storage Temperature
T_J, T_stg
1. FR−4 @ 100 mm², 1 oz. copper traces, still air.
2. FR−4 @ 500 mm², 1 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels.
Max
231
1.9
540
269
2.2
464
339
2.7
369
408
3.3
306
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES
Device
Marking*
R1 (k)
R2 (k)
Package
Shipping^†
NSBA114EDP6T5G
F (180°)
10
10
NSBA124EDP6T5G
E (90°)
22
22
NSBA144EDP6T5G
E (270°)
47
47
NSBA114YDP6T5G
Q (0°)
10
47
NSBA123TDP6T5G
NSBA143EDP6T5G
NSBA143ZDP6T5G
L (90°)
F (90°)
K (90°)
2.2
∝
4.7
4.7
SOT−963
(Pb−Free)
4.7
47
8000/Tape & Reel
NSBA123JDP6T5G
P (90°)
2.2
47
NSBA144WDP6T5G
J (90°)
47
22
NSBA114TDP6T5G
T (180°)
10
∝
NSBA115TDP6T5G
V (180°)
100
∝
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
*(XX°) = Degree rotation in the clockwise direction.
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