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NSB1706DMW5T1 Datasheet, PDF (2/3 Pages) ON Semiconductor – Dual Bias Resistor Transistor
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NSB1706DMW5T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
−
−
100 nAdc
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
−
−
500 nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
0.18 mAdc
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
hFE
80
200
−
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 1 mA)
VCE(sat)
−
−
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
Vdc
−
−
0.2
Output Voltage (off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
VOH
4.9
−
−
Vdc
Input Resistor
R1
3.3
4.7
6.1
kW
Resistor Ratio
R1/R2
0.055 0.1 0.185
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
NOTE: New resistor combinations. Updated curves to follow in subsequent data sheets.
300
250
200
150
100
50
RqJA = 833°C/W
0
− 50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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