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| NSB13211DW6T1G Datasheet, PDF (2/4 Pages) ON Semiconductor – Dual Complementary Bias Resistor Transistors | |||
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NSB13211DW6T1G
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance, JunctionâtoâAmbient
Characteristic (Both Junctions Heated)
Total Device Dissipation,
TA = 25°C
Derate above 25°C
Thermal Resistance, JunctionâtoâAmbient
Junction and Storage Temperature
1. FR-4 @ Minimum Pad of 1.45 mm2, 1 oz Cu.
Symbol
PD
RqJA
Symbol
PD
RqJA
TJ, Tstg
Max
180 (Note 1)
1.44 (Note 1)
692 (Note 1)
Max
230
1.83
544
-Ä55 to +150
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS - Q1 (PNP BRT) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
-
-
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
-
-
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
-
-
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
-
Collector-Emitter Breakdown Voltage (Note 2)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
-
ON CHARACTERISTICS (Note 2)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
hFE
15
27
Collector-Emitter Saturation Voltage
(IC = Ä10 mA, IB = Ä1 mA)
VCE(sat)
-
-
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = Ä5.0 V, VB = Ä0.25 V, RL = 1.0 kW)
VOL
-
-
VOH
4.9
-
Input Resistor
Resistor Ratio
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
R1
3.3
4.7
R1/R2
0.8
1.0
Max
Unit
100
nAdc
500
nAdc
1.5
mAdc
-
Vdc
-
Vdc
-
0.25
Vdc
0.2
Vdc
-
Vdc
6.1
kW
1.2
http://onsemi.com
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