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NSB12ANT3G Datasheet, PDF (2/6 Pages) ON Semiconductor – 600 Watt Peak Power Zener Transient Voltage Suppressor
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NSB12ANT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction to Lead
PPK
PD
RqJL
600
W
3.0
W
40
mW/°C
25
°C/W
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction to Ambient
PD
RqJA
0.55
W
4.4
mW/°C
226
°C/W
Operating and Storage Temperature Range
TJ, Tstg
-65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non-repetitive at maximum IPPM and VCM, see electrical characteristics.
2. 1″ square copper pad, FR-4 board
3. FR-4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
IF
VF
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Forward Current
Forward Voltage @ IF
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni-Directional TVS
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Zener Voltage (Note 5)
Reverse Leakage Current
Clamping Voltage
IT = 1 mA
VRWM = 12 V
IPPM = 30.2 A
(Per Figure 1, Note 6)
VBR
IR
VCM
13.2
Forward Peak Voltage
IF = 30 A
VF
(Note 4)
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, non-repetitive duty cycle.
5. VZ measured at pulse test IT at an ambient temperature of 25°C.
6. Absolute Maximum Peak Current, IPPM.
Typ
13.75
Max
Unit
14.3
V
5.0
mA
19.9
V
3.5
V
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