NSA5.0AT3G Datasheet, PDF (2/4 Pages) ON Semiconductor – 400 Watt Peak Power Zener Transient Voltage Suppressor

NSA5.0AT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ T_L = 25°C, Pulse Width = 1 ms
DC Power Dissipation @ T_L = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction to Lead
DC Power Dissipation (Note 3) @ T_A = 25°C
Derate Above 25°C
Thermal Resistance from Junction to Ambient
P_PK
P_D
R_qJL
P_D
R_qJA
400
W
1.5
W
20
mW/°C
50
°C/W
0.5
W
4.0
mW/°C
250
°C/W
Forward Surge Current (Note 4) @ T_A = 25°C
I_FSM
40
A
Operating and Storage Temperature Range
T_J, T_stg
−65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive.
2. 1″ square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403D case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted)
Symbol
Parameter
I_PP
V_C
V_RWM
I_R
V_BR
I_T
I_F
V_F
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I_PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V_RWM
Breakdown Voltage @ I_T
Test Current
Forward Current
Forward Voltage @ I_F
I
I_F
V_C V_BR V_RWM
II^{RT VF}
V
I_PP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS
Device
Device
Marking
V_RWM
(Note 5)
Volts
I_R @
V_RWM
mA
Breakdown Voltage
V_BR (Volts) (Note 6)
Min Nom Max
@ I_T
mA
V_C @ I_PP
(Note 7)
V_C
Volts
I_PP
Amps
C Typ.
(Note 8)
pF
V_F @ I_F
(Note 9)
Max
V
NSA5.0AT3G QA
5.0
400
6.4
6.7
7.0
10
9.2
43.5
2450
3.5
5. A transient suppressor is normally selected according to the working peak reverse voltage (V_RWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
6. V_BR measured at pulse test current I_T at an ambient temperature of 25°C.
7. Surge current waveform per Figure 2 and derate per Figure 3.
8. Bias voltage = 0 V, F = 1.0 MHz, T_J = 25°C.
9. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive, I_F = 30 A.
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