NS6A5.0AFT3G Datasheet, PDF (2/5 Pages) ON Semiconductor – Watt Peak Power Zener Transient Voltage Suppressors

NS6A5.0AFT3G, SZNS6A5.0AFT3G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ T_L = 25°C, Pulse Width = 1 ms
P_PK
600
W
DC Power Dissipation @ T_L = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
P_D
R_qJL
1.5
W
20
mW/°C
50
°C/W
DC Power Dissipation (Note 3) @ T_A = 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
P_D
R_qJA
0.5
W
4.0
mW/°C
250
°C/W
Forward Surge Current (Note 4) @ T_A = 25°C
I_FSM
40
A
Operating and Storage Temperature Range
T_J, T_stg
−65 to +150
°C
1. 10 X 1000 ms, non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403AA case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless
otherwise noted, V_F = 3.5 V Max. @ I_F (Note 5) = 30 A)
Symbol
Parameter
I_PP
Maximum Reverse Peak Pulse Current
V_C
Clamping Voltage @ I_PP
V_RWM Working Peak Reverse Voltage
I_R
Maximum Reverse Leakage Current @ V_RWM
V_BR
Breakdown Voltage @ I_T
I_T
Test Current
I_F
Forward Current
V_F
Forward Voltage @ I_F
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non−repetitive duty cycle.
I
I_F
V_C V_BR V_RWM
II^{RT VF}
V
I_PP
Uni−Directional TVS
http://onsemi.com
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