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| NS6A13AT3G Datasheet, PDF (2/4 Pages) ON Semiconductor – 600 Watt Peak Power Zener Transient Voltage Suppressor | |||
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NS6A13AT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction to Lead
PPK
PD
RqJL
600
W
1.5
W
20
mW/°C
50
°C/W
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction to Ambient
PD
RqJA
0.5
W
4.0
mW/°C
250
°C/W
Forward Surge Current (Note 4) @ TA = 25°C
IFSM
40
A
Operating and Storage Temperature Range
TJ, Tstg
â65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, nonârepetitive.
2. 1â³ square copper pad, FRâ4 board
3. FRâ4 board, using ON Semiconductor minimum recommended footprint, as shown in 403D case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
nonârepetitive duty cycle.
I
IF
VC VBR VRWM
IIRT VF
V
IPP
UniâDirectional TVS
ELECTRICAL CHARACTERISTICS
Device
Device
Marking
VRWM
(Note 6)
V
IR @ VRWM
mA
Breakdown Voltage
VBR (Note 7) Volts
Min Nom Max
@ IT
mA
VC @ IPP (Note 8)
VC
IPP
V
A
Ctyp
(Note 9)
pF
NS6A13AT3G
6LG
13
5.0
14.4 15.15 15.9
1.0
21.5
27.9
1160
6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. VBR measured at pulse test current IT at an ambient temperature of 25°C.
8. Surge current waveform per Figure 1.
9. Bias Voltage = 0 V, F = 1 MHz, TJ = 25°C.
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