NS6A12AT3G Datasheet, PDF (2/4 Pages) ON Semiconductor – 600 Watt Peak Power Zener Transient Voltage Suppressor

NS6A12AT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ T_L = 25°C, Pulse Width = 1 ms
DC Power Dissipation @ T_L = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction to Lead
P_PK
P_D
R_qJL
600
W
1.5
W
20
mW/°C
50
°C/W
DC Power Dissipation (Note 3) @ T_A = 25°C
Derate Above 25°C
Thermal Resistance from Junction to Ambient
P_D
R_qJA
0.5
W
4.0
mW/°C
250
°C/W
Operating and Storage Temperature Range
T_J, T_stg
−65 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. 10 X 1000 ms, non−repetitive.
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403D case outline dimensions spec.
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless
otherwise noted)
Symbol
Parameter
I_PP
Maximum Reverse Peak Pulse Current
V_C
Clamping Voltage @ I_PP
V_RWM Working Peak Reverse Voltage
I_R
Maximum Reverse Leakage Current @ V_RWM
V_BR Breakdown Voltage @ I_T
I_T
Test Current
I_F
Forward Current
V_F
Forward Voltage @ I_F
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non−repetitive duty cycle.
I
I_F
V_C V_BR V_RWM
II^{RT VF}
V
I_PP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS
Device
Device
Marking
V_RWM
(Note 5)
V
I_R @ V_RWM
mA
Breakdown Voltage
V_BR (Note 6) Volts
Min Nom Max
@ I_T
mA
V_C @ I_PP (Note 7)
V_C
I_PP
V
A
NS6A12AT3G
6LF
12
0.5
13.3 14.0 14.7
1.0
31
19.5
5. A transient suppressor is normally selected according to the working peak reverse voltage (V_RWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
6. V_BR measured at pulse test current I_T at an ambient temperature of 25°C.
7. Surge current waveform per Figure 1.
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