 English |
|
|
|
|
|
|
|
| NRVUD620CTT4G Datasheet, PDF (2/5 Pages) ON Semiconductor – SWITCHMODE Power Rectifier | |||
| |||
| ◁ |
MURD620CTG, MURD620CTT4G, NRVUD620CTG, NRVUD620CTT4G
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 140°C)
Per Diode
Per Device
Rating
Symbol
VRRM
VRWM
VR
IF(AV)
Value
200
3.0
6.0
Unit
V
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 145°C)
Per Diode
IF
A
6.0
NonâRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)
IFSM
A
50
Operating Junction and Storage Temperature Range
TJ, Tstg
â65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Diode)
Characteristic
Thermal Resistance, JunctionâtoâCase
Thermal Resistance, JunctionâtoâAmbient (Note 1)
1. Rating applies when surface mounted on the minimum pad sizes recommended.
Symbol
RqJC
RqJA
Value
9
80
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode)
Characteristic
Maximum Instantaneous Forward Voltage Drop (Note 2)
(iF = 3 Amps, TC = 25°C)
(iF = 3 Amps, TC = 125°C)
(iF = 6 Amps, TC = 25°C)
(iF = 6 Amps, TC = 125°C)
Maximum Instantaneous Reverse Current (Note 2)
(TJ = 25°C, Rated dc Voltage)
(TJ = 125°C, Rated dc Voltage)
Maximum Reverse Recovery Time
(IF = 1 Amp, di/dt = 50 Amps/ms, VR = 30 V, TJ = 25°C)
(IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, TJ = 25°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ⤠2.0%.
Symbol
vF
iR
trr
Value
1
0.96
1.2
1.13
5
250
35
25
Unit
V
mA
ns
http://onsemi.com
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese