NRVTS560EMFS Datasheet, PDF (2/5 Pages) ON Semiconductor – Schottky Rectifier

NRVTS560EMFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V
V_RWM
V_R
60
Average Rectified Forward Current
(Rated V_R, T_C = 168°C)
I_F(AV)
5.0
A
Peak Repetitive Forward Current,
(Rated V_R, Square Wave, 20 kHz, T_C = 167°C)
I_FRM
10
A
Non−Repetitive Peak Surge Current
I_FSM
150
A
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
T_stg
−65 to +175
°C
T_J
−55 to +175
°C
E_AS
60
mJ
TBD
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm² 1 oz. copper bond pad, on a FR4 board)
Symbol
R_θJC
Max
2.4
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 1)
(i_F = 2.5 Amps, T_J = 25°C)
(i_F = 5.0 Amps, T_J = 25°C)
Symbol
Typ
v_F
0.50
0.55
Max
Unit
V
−
0.61
(i_F = 2.5 Amps, T_J = 125°C)
(i_F = 5.0 Amps, T_J = 125°C)
0.41
−
0.50
0.59
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T_J = 25°C)
(Rated dc Voltage, T_J = 125°C)
i_R
−
30
mA
2
4
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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