NRVBS540T3G Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS540T3G, NRVBS540T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V_R, T_C = 105°C)
Peak Repetitive Forward Current
(At Rated V_R, Square Wave, 20 KHz, T_C = 80°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
V_RRM
40
V
V_RWM
V_R
I_F(AV)
5
A
I_FRM
10
A
I_FSM
190
A
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temperature (Note 1)
T_J
−65 to +150
°C
Voltage Rate of Change (Rated V_R)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Lead (Note 2)
Thermal Resistance,
Junction−to−Ambient (Note 2)
2. Rating applies when surface mounted on the minimum pad size recommended.
Symbol
R_qJL
R_qJA
Value
12
111
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(i_F = 5.0 A, T_C= 25°C)
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T_C = 25°C)
(Rated dc Voltage, T_C = 100°C)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Symbol
V_F
i_R
Value
0.50
0.3
15
Unit
V
mA
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