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| NRVBS4201T3G Datasheet, PDF (2/5 Pages) ON Semiconductor – 200V, 4A Schottky Fast Soft-Recovery | |||
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MBRS4201T3G, NRVBS4201T3G
MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
VRWM
200
VR
Average Rectified Forward Current
(Rated VR, TL = 70ï°C)
IF(AV)
A
4
Nonrepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
A
100
Operating Junction Temperature
TJ
â55 to +150
ï°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctionâtoâLead
Symbol
RqJL
Value
11
Unit
ï°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
(IF = 4 A, TJ = 25ï°C)
(IF = 4 A, TJ = 150ï°C)
Maximum Instantaneous Reverse Current (Rated VR)
(Rated DC Voltage, TJ = 25ï°C)
(Rated DC Voltage, TJ = 150ï°C)
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 100 A/ms, VR = 30 V)
Symbol
Value
Unit
VF
V
0.86
0.61
IR
1.0
mA
5.0
mA
trr
35
ns
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