NRVBS2040LT3G Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS2040LT3G, NRVBS2040LT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
40
V
V_RWM
V_R
Average Rectified Forward Current
(At Rated V_R, T_C = 103C)
I_O
A
2.0
Peak Repetitive Forward Current
(At Rated V_R, Square Wave, 20 kHz, T_C = 104C)
I_FRM
A
4.0
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I_FSM
A
70
Storage Temperature
T_stg, T_C
−55 to +150
C
Operating Junction Temperature
T_J
−55 to +125
C
Voltage Rate of Change
(Rated V_R, T_J = 25C)
dv/dt
V/ms
10,000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction−to−Lead (Note 1)
Thermal Resistance — Junction−to−Ambient (Note 2)
1. Minimum pad size (0.108 X 0.085 inch) for each lead on FR4 board.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
Symbol
R_JL
R_JA
Value
22.5
78
Unit
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
see Figure 2
(I_F = 2.0 A)
(I_F = 4.0 A)
Maximum Instantaneous Reverse Current (Note 3)
see Figure 4
(V_R = 40 V)
(V_R = 20 V)
3. Pulse Test: Pulse Width  250 s, Duty Cycle  2.0%.
Symbol
V_F
I_R
Value
T_J = 25C
T_J = 125C
0.43
0.34
0.50
0.45
T_J = 25C
0.8
0.1
T_J = 100C
20
6.0
Unit
Volts
mA
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