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| NRVBB1060_16 Datasheet, PDF (2/6 Pages) ON Semiconductor – Switch-mode Power Rectifier | |||
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NRVBB1060, NRVBB1060W1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
60
V
VRWM
VR
Average Rectified Forward Current (Rated VR) TC = 133°C
IF(AV)
10
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133°C
IFRM
20
A
Nonrepetitive Peak Surge Current
IFSM
150
A
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
0.5
A
Operating Junction Temperature (Note 1)
TJ
*65 to +175
°C
Storage Temperature
Tstg
*65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from JunctionâtoâAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, JunctionâtoâCase
Maximum Thermal Resistance, JunctionâtoâAmbient
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, TC = 125°C)
(iF = 10 Amps, TC = 25°C)
(iF = 20 Amps, TC = 125°C)
(iF = 20 Amps, TC = 25°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ⤠2.0%.
RqJC
RqJA
vF
iR
2.0
°C/W
60
°C/W
V
0.7
0.8
0.85
0.95
mA
25
0.10
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