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| NRVBA210LT3G Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier | |||
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MBRA210LT3G, NRVBA210LT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
10
V
VRWM
VR
Average Rectified Forward Current
(At Rated VR, TL = 110ï°C)
IO
A
2.0
NonâRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
A
160
Storage/Operating Case Temperature
Operating Junction Temperature
Tstg, TC
â55 to +125
ï°C
TJ
Voltage Rate of Change
(Rated VR, TJ = 25ï°C)
dv/dt
V/ms
10,000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctionâtoâLead
Thermal Resistance, JunctionâtoâAmbient
Symbol
RqJL
RqJA
Min Pad
22
150
1 Inch Pad
15
81
Unit
ï°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 2.0 A)
Maximum Instantaneous Reverse Current
(VR = 5.0 V)
(VR = 10 V)
1. Pulse Test: Pulse Width ï£ 250 ms, Duty Cycle ï£ 2%.
VF
TJ = 25ï°C
TJ = 100ï°C
V
0.260
0.15
0.325
0.23
0.350
0.26
IR
TJ = 25ï°C
TJ = 100ï°C
mA
0.25
40
0.70
60
100
100
10
VF @ 125ï°C
25ï°C
10
VF @ 125ï°C
25ï°C
100ï°C
100ï°C
75ï°C
75ï°C
1
1
0.1
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.1
0.05 0.15
0.25
0.35
0.45 0.55
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
http://onsemi.com
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