NRVBA130LT3G Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRA130LT3G, NRVBA130LT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V_R, T_C = 105C)
Peak Repetitive Forward Current
(At Rated V_R, Square Wave, 100 kHz, T_C = 105C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
V_RRM
30
V
V_RWM
V_R
I_O
A
1.0
I_FRM
A
2.0
I_FSM
A
25
Storage Temperature
T_stg
−55 to +150
C
Operating Junction Temperature
T_J
−55 to +125
C
Voltage Rate of Change, (Rated V_R, T_J = 25C)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction−to−Lead (Note 1)
Thermal Resistance — Junction−to−Ambient (Note 1)
1. Mounted on 2 Square PC Board with 1 Square Total Pad Size, PC Board FR4.
Symbol
R_qJL
R_qJA
Value
35
86
Unit
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(I_F = 1.0 A) see Figure 2
(I_F = 2.0 A)
Maximum Instantaneous Reverse Current
(V_R = 30 V) see Figure 4
(V_R = 15 V)
2. Pulse Test: Pulse Width  250 ms, Duty Cycle  2.0%.
Symbol
V_F
I_R
Value
T_J = 25C
0.41
0.47
T_J = 100C
0.35
0.43
T_J = 25C
1.0
0.4
T_J = 100C
25
12
Unit
Volts
mA
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