NRVB130T1G Datasheet, PDF (2/4 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBR130, NRVB130
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V_R) T_L = 65°C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
V_RRM
30
V
V_RWM
V_R
I_F(AV)
A
1.0
I_FSM
A
5.5
Storage Temperature Range
T_stg
−65 to +125
°C
Operating Junction Temperature
T_J
−65 to +125
°C
Voltage Rate of Change (Rated V_R)
dv/dt
1000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (Note 1)
Thermal Resistance, Junction to Lead (Note 1)
1. FR−4 or FR−5 = 3.5 × 1.5 inches using a 1 inch Cu pad.
Symbol
R_θJA
R_θJL
Value
230
108
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage (Note 2)
(I_F = 0.1 A, T_J = 25°C)
(I_F = 0.7 A, T_J = 25°C)
(I_F = 1.0 A, T_J = 25°C)
V_F
V
−
0.35
−
0.45
0.47
−
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T_C = 25°C)
(V_R = 5 V, T_C = 25°C)
I_R
mA
60
10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
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