 English |
|
|
|
|
|
|
|
| NRVB10100G Datasheet, PDF (2/4 Pages) ON Semiconductor – SWITCHMODE Power Rectifiers | |||
| |||
| ◁ |
MBR1080G, MBR1090G, MBR10100G, NRVB10100G
MAXIMUM RATINGS
Rating
MBR/NRVB
Symbol
Unit
1080 1090 10100
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Rated VR) TC = 133ï°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133ï°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
VRRM
80
90
100
V
VRWM
VR
IF(AV)
10
A
IFRM
A
20
IFSM
A
150
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
0.5
A
Operating Junction Temperature (Note 1)
TJ
*65 to +175
ï°C
Storage Temperature
Tstg
*65 to +175
ï°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctionâtoâAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, JunctionâtoâCase
Maximum Thermal Resistance, JunctionâtoâAmbient
Symbol
RqJC
RqJA
Value
2.0
60
Unit
ï°C/W
ï°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, TC = 125ï°C)
(iF = 10 Amps, TC = 25ï°C)
(iF = 20 Amps, TC = 125ï°C)
(iF = 20 Amps, TC = 25ï°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125ï°C)
(Rated dc Voltage, TC = 25ï°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ï£ 2.0%.
Symbol
Value
Unit
vF
V
0.7
0.8
0.85
0.95
iR
mA
6.0
0.10
http://onsemi.com
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese