NRTSAF360 Datasheet, PDF (2/5 Pages) ON Semiconductor – Trench-based Schottky Rectifier

NRTSAF360, NRVTSAF360
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(T_L = 143°C)
Peak Repetitive Forward Current
(Rated V_R, Square Wave, 20 kHz) T_L = 138°C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
V_RRM
60
V
V_RWM
V_R
I_O
A
3.0
I_FRM
6.0
A
I_FSM
A
100
Storage Temperature Range
T_stg
−65 to +175
°C
Operating Junction Temperature (Note 1)
T_J
−55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
Symbol
Y_JCL
R_qJA
Value
24.5
81
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage (Note 3)
(I_F = 3 A, T_J = 25°C)
(I_F = 3 A, T_J = 125°C)
(I_F = 6 A, T_J = 25°C)
V_F
V
0.48
0.64
0.41
0.58
0.57
0.78
Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T_J = 25°C)
(Rated dc Voltage, T_J = 125°C)
I_R
4.5
50
mA
3.5
15
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
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