NP0640SXT3G Datasheet, PDF (2/5 Pages) ON Semiconductor – Thyristor Surge Protectors High Voltage Bidirectional

NP Series
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristics (Note 1)
Symbol
Min
Typ
Max
Unit
Breakover Voltage (Both Polarities)
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
V_(BO)
V
77
88
98
130
160
180
220
240
260
300
350
400
Off−State Voltage (Both Polarities)
V_DRM
V
NP0640SxT3G
58
NP0720SxT3G
65
NP0900SxT3G
75
NP1100SxT3G
90
NP1300SxT3G
120
NP1500SxT3G
140
NP1800SxT3G
170
NP2100SxT3G
180
NP2300SxT3G
190
NP2600SxT3G
220
NP3100SxT3G
275
NP3500SxT3G
320
Off State Current
( V_D1 = 50 V ) Both Polarities
( V_D2 = V_DRM ) Both Polarities
I_DRM1
I_DRM2
2.0
mA
5.0
mA
Holding Current (Both Polarities) (Note 4) V_S = 500 V; I_T = 2.2 A
I_H
150
250
−
mA
On−State Voltage I_T = 1.0 A(pk) (PW = 300 mSec, DC = 2%)
V_T
−
−
4.0
V
Maximum Non−Repetitive Rate of Change of On−State Current (Note 1)
di/dt
−
(Haefely test method, 1.0 pk < 100 A)
−
500
A/mSec
Critical Rate of Rise of Off−State Voltage
(Linear Waveform, V_D = 0.8 V_DRM, T_J = 25°C)
CAPACITANCE
dv/dt
5.0
−
−
kV/mSec
Typ
Characteristics
Symbol
A
B
C
Unit
(f=1.0 MHz, 1.0 V_rms, 2 Vdc bias)
C_o
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
pF
70
125
210
70
125
210
70
125
210
70
125
210
60
100
180
60
100
180
60
100
180
60
100
180
40
60
100
40
60
100
40
60
100
40
60
100
1. Electrical parameters are based on pulsed test methods.
2. di/dt must not be exceeded of a maximum of 100 A/mSec in this application.
3. Measured under pulsed conditions to reduce heating
4. Allow cooling before testing second polarity.
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