NLV17SZ16 Datasheet, PDF (2/5 Pages) ON Semiconductor – Single Input Buffer

NLV17SZ16
MAXIMUM RATINGS
Symbol
Parameter
Value
Units
V_CC
V_I
V_O
I_IK
I_OK
I_OUT
I_CC
I_GND
T_STG
T_L
T_J
q_JA
P_D
MSL
DC Supply Voltage
DC Input Voltage
Output in High or Low State (Note 2)
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
V_I < GND
V_O < GND
DC Output Sink Current
DC Supply Current per Supply Pin
DC Ground per Supply Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
Power Dissipation in Still Air at 85°C
Moisture Sensitivity
−0.5 to +7.0
−0.5 ≤ V_I ≤ +7.0
−0.5 ≤ V_O ≤ +7.0
−50
−50
±50
±100
±100
−65 to +150
260
+150
350
150
Level 1
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
°C/W
mW
F_R
ESD
Flammability Rating
ESD Classification
Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
Human Body Model (Note 3)
Class IC
V
Machine Model (Note 4)
Class A
Charged Device Model (Note 5)
N/A
I_Latchup Latchup Performance
Above V_CC and Below GND at 85°C (Note 6)
$500
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. I_O Absolute Maximum Rating Must be Obtained.
3. Tested to EIA/JESD22−A114−A, rated to EIA/JESD22−A114−B.
4. Tested to EIA/JESD22−A115−A, rated to EIA/JESD22−A115−A.
5. Tested to JESD22−C101−A.
6. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V_CC DC Supply Voltage
Min
Operations Only
1.65
Data Retention
1.5
Max
Units
5.5
V
5.5
V_IN
DC Input Voltage
0
5.5
V
V_OUT DC Output Voltage
0
5.5
V
T_A
Operating Temperature Range
−55
+125
°C
t_r, t_f
Input Rise and Fall Time
V_CC = 2.5 V ±0.2 V
0
V_CC = 3.0 V ±0.3 V
0
V_CC = 5.0 V ±0.5 V
0
20
ns/V
10
5
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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