NHPAF320_16 Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Ultrafast Power Rectifier

NHPAF320, NRVHPAF320
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(T_L = 115°C)
Peak Repetitive Forward Current
(Rated V_R, Square Wave, 20 kHz) T_L = 105°C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
V_RRM
200
V
V_RWM
V_R
I_O
A
3.0
I_FRM
6.0
A
I_FSM
A
110
Storage Temperature Range
T_stg
−65 to +175
°C
Operating Junction Temperature
T_J
−65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
1. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
Symbol
Y_JCL
R_qJA
Value
29
80
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Value
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(i_F = 3.0 A)
Maximum Instantaneous Reverse Current (Note 2)
(V_R = 200 V)
Symbol
v_F
I_R
T_J = 25°C
1.00
0.50
T_J = 125°C
0.80
25
Unit
V
mA
Reverse Recovery Time
I_F = 3.0 A, V_R = 30 V, dl/dt = 50 A/ms, T_J = 25°C
t_rr
30
ns
Reverse Recovery Time
I_F = 3.0 A, V_R = 30 V, dl/dt = 50 A/ms, T_J = 125°C
t_rr
50
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
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