NCP431 Datasheet, PDF (2/17 Pages) ON Semiconductor – Programmable Precision References

NCP431A, SC431A, NCP431B, SC431B, NCP432B, SC432B Series
Cathode
(K)
Reference
(R)
Cathode
(K)
Reference
(R)
Anode
(A)
Figure 1. Symbol
2.5 V_ref
Anode
(A)
Figure 2. Representative Block diagram
This device contains 20 active transistors
MAXIMUM RATINGS (Full operating ambient temperature range applies, unless otherwise noted)
Symbol
Rating
Value
Unit
V_KA
Cathode to Anode Voltage
I_K
Cathode Current Range, Continuous
I_ref
Reference Input Current Range, Continuous
T_J
Operating Junction Temperature
T_A
Operating Ambient Temperature Range
T_stg
Storage Temperature Range
P_D
Total Power Dissipation @ T_A = 25°C
Derate above 25°C Ambient Temperature
D, LP Suffix Plastic Package
SN1 Suffix Plastic Package
37
V
−100 to +150
mA
−5 to +10
mA
150
°C
−40 to +125
°C
−65 to +150
°C
W
0.70
0.52
P_D
Total Power Dissipation @ T_C = 25°C
Derate above 25°C Case Temperature
D, LP Suffix Plastic Package
1.5
W
HBM
CDM
ESD Rating (Note 1)
Human Body Model per JEDEC JESD22−A114F
Charged Device Model per JEDEC JESD22−C101E
V
>2000
>1000
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device contains latch−up protection and exceeds ±100 mA per JEDEC standard JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Condition
Min
Max
Unit
V_KA
Cathode to Anode Voltage
V_ref
36
V
I_K
Cathode Current
0.04
100
mA
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
THERMAL CHARACTERISTICS
Symbol
R_QJA
R_QJL
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead (Lead 3)
LP Suffix Package
(50 mm² x 35 mm Cu)
176
D Suffix Package
(50 mm² x 35 mm Cu)
210
SN Suffix Package
(10 mm² x 35 mm Cu)
255
Unit
°C/W
75
68
80
°C/W
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