MURS220T3G Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Ultrafast Power Rectifiers

MURS220T3G, NRVUS220VT3G, SURS8220T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
V_RRM
200
V
V_RWM
V_R
I_F(AV)
2.0 @ T_L = 145°C
A
I_FSM
A
40
Operating Junction Temperature Range
T_J
−65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Lead
(T_L = 25°C)
Symbol
R_θJL
Value
13
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(I_F = 2.0 A, T_J = 25°C)
(I_F = 2.0 A, T_J = 150°C)
v_F
Volts
0.95
0.77
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T_J = 25°C)
(Rated dc Voltage, T_J = 150°C)
I_R
mA
2.0
50
Maximum Reverse Recovery Time
(I_F = 1.0 A, di/dt = 50 A/ms)
(I_F = 0.5 A, i_R = 1.0 A, I_R to 0.25 A)
t_rr
ns
35
25
Maximum Forward Recovery Time
t_fr
ns
(I_F = 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V)
25
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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